Suppression of plateau structure in the current negative resistance region by external magnetic field in strained RTD 外加磁场对应变RTD电流负阻平台的抑制作用
This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。
Switching phenomena with an associated negative resistance region have been observed in the current-voltage characteristics of lead oxide film sandwiches. 在氧化铅薄膜三层结构的电流&电压特性中发现了具有负电阻区的开关现象。
The experimental results by pulse method confirm that the negative dynamic resistance of the power VD-MOSFETs originates mainly from self-heating in the region measured. 用脉冲法测试,通过分析对比证实,在测量范围内,引起这种动态负阻的根源主要是自加热效应。
Using the hysteresis and plateau-like effects, the good stability can be achieved by adjusting the parameters of the structure, such as quantum well width and doping concentration, to enlarge the extent and decrease the slop of negative resistance region. 利用共振隧穿结构在负阻区域的滞后(Hysteresis)和平台效应(Plateau-like),通过改变结构参数,如量子阱宽度、掺杂浓度等,加宽负阻区域,减小斜率,达到提高器件稳定性的目的。